Dry under water: air retaining properties of large-scale elastomer foils covered with mushroom-shaped surface microstructures

• Matthias Mail,
• Stefan Walheim,
• Thomas Schimmel,
• Wilhelm Barthlott,
• Stanislav N. Gorb and
• Lars Heepe

Beilstein J. Nanotechnol. 2022, 13, 1370–1379, doi:10.3762/bjnano.13.113

• placed. The semi-transparent MSM surfaces were glued to a green silicon surface to enhance contrast (air layer/wet surface). The samples were photographed using a digital camera (EOS-650D, Canon, Krefeld) every 3 min until the samples were completely wetted and no retaining air was visible. The area of

• floating fern Salvinia oblongifolia submerged in water. The silvery shine indicates the kept air layer. b) Elastomer foil covered with mushroom-shaped surface microstructures (MSM) submerged in water. MSM-surfaces were glued to a green silicon surface to enhance contrast. Like on the biological role model

• , 10 and 20 cm) over time. b–d) Examples of the images taken in the experiment. MSM surfaces were glued to a green silicon surface to enhance contrast, and imaged in defined time steps. b) At the beginning of the experiment, the sample (indicated by a dotted line) was completely covered by air. c

Influence of water contamination on the sputtering of silicon with low-energy argon ions investigated by molecular dynamics simulations

• Grégoire R. N. Defoort-Levkov,
• Alan Bahm and
• Patrick Philipp

Beilstein J. Nanotechnol. 2022, 13, 986–1003, doi:10.3762/bjnano.13.86

• by molecular dynamics (MD) simulations how one of the most commonly found residual contaminations in vacuum chambers (i.e., water adsorbed on a silicon surface) influences sputtering by 100 eV argon ions. The incidence angle was changed from normal incidence to close to grazing incidence. For the

• for QEq. During water deposition on top of the silicon sample, the charge equilibration was performed at each step to fully describe the deposition of the contaminant on top of the sample. Molecular dynamics simulations Molecular dynamics simulations of argon bombardment on a silicon surface were

• silicon surface was prepared before ion irradiation and not renewed during the milling process. However, in experiments, contaminations are continuously adsorbed on the sample surface, leading to a renewal of the contamination layer. Furthermore, at higher impact energy the implantation depth of the ions

A review on slip boundary conditions at the nanoscale: recent development and applications

• Ruifei Wang,
• Jin Chai,
• Bobo Luo,
• Xiong Liu,
• Jianting Zhang,
• Min Wu,
• Mingdan Wei and
• Zhuanyue Ma

Beilstein J. Nanotechnol. 2021, 12, 1237–1251, doi:10.3762/bjnano.12.91

• ]. Furthermore, Rezaei et al. performed MD simulations to study the electro-osmotic flow of an aqueous NaCl solution on a charged silicon surface [23], and similar conclusions as the ones proposed by Joly et al. were drawn in terms of the relationship between slip length and surface charge density. On the other

Modification of a SERS-active Ag surface to promote adsorption of charged analytes: effect of Cu²⁺ ions

• Bahdan V. Ranishenka,
• Andrei Yu. Panarin,
• Irina A. Chelnokova,
• Sergei N. Terekhov,
• Peter Mojzes and
• Vadim V. Shmanai

Beilstein J. Nanotechnol. 2021, 12, 902–912, doi:10.3762/bjnano.12.67

• were analyzed from SEM and TEM images. To achieve a better resolution during SEM, we utilized a conductive silicon support and excluded the metal coating of the sample; Ag NPs were placed on the silicon surface by adsorptive immobilization to avoid aggregation during solvent evaporation. Figure 1 shows

• silicon surface functionalization Standard optical microscope glass slides of 1.0 mm thickness were used as base substrates. As a silicon support, 5 mm square-shaped polished chips of Sb-doped electrically conductive silicon were used. The modification was performed in a similar way as described in [36

• deposited onto a PEI-modified silicon conductive support by adsorptive immobilization. Immobilization kinetics of Ag NPs on a glass substrate. Since the glass slides were modified on both sides, the spectra correspond to the absorption of two NPs layers. SEM image of Ag NPs immobilized on silicon surface by

9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber

• Rafal Pietruszka,
• Bartlomiej S. Witkowski,
• Monika Ozga,
• Katarzyna Gwozdz,
• Ewa Placzek-Popko and
• Marek Godlewski

Beilstein J. Nanotechnol. 2021, 12, 766–774, doi:10.3762/bjnano.12.60

• deionized water. The cleaning process removed impurities from the silicon surface (e.g., fat, powders, and dust). The cleaning process was carried out in an ultrasonic cleaner for 5 min for each of the chemicals. Then, the samples were dried in a stream of nitrogen. Following this stage, aluminium was

• Figure 1. Results and Discussion Figure 2 shows as-grown zinc oxide nanorods on the silicon surface grown by the hydrothermal method described above. Scanning electron microscopy (SEM) images revealed that the shape of the nanorods is hexagonal. The estimated width of hexagonal rods equals 160 ± 5 nm and

• large angles between cell and light source. The magnesium-doped zinc oxide films exhibited grain growth mode on sample B. Close to the silicon surface, only small grains were grown initially. The size of the MZO grains varies but does not exceed a value of 50 nm. Then (for larger distances from the Si

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

• Frances I. Allen

Beilstein J. Nanotechnol. 2021, 12, 633–664, doi:10.3762/bjnano.12.52

• nanofabrication tasks. For example, irradiation of silicon substrates has been used to pattern raised lines, achieving a half-pitch down to 3.5 nm [94] (Figure 3e, top). In the same study, 3D nanopyramids and nanocones rising from the silicon surface were also created, achieved by dosing a series of concentric

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• stable tip–sample contact during the sMIM measurements. A root mean square (RMS) roughness of the silicon surface below 3 nm was measured. First, we studied the PIN vertical structure and the anode contact. Area 1 in Figure 2 was scanned with VDC = 0 V and VAC = 1.0 V. The sMIM results for a scanned area

• sensitive to surface charges (often induced by the sample preparation process) and the quality of the native oxide on the scanned silicon surface. When the sMIM probe scans a doped semiconductor, the tip–sample system forms a nano-MIS capacitor exhibiting a corresponding capacitance Cnano. The sMIM-C signal

PTCDA adsorption on CaF₂ thin films

• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1615–1622, doi:10.3762/bjnano.11.144

• (111)-(7 × 7), molecules bind in various geometries to the pristine silicon surface as apparent from Figure 1a. Among these geometries, a distinguished adsorption position on top of the (7 × 7) corner hole stands out. Two examples are marked by white ellipses in Figure 1a. The growth of ordered CaF2

• films on Si(111) requires the formation of a CaF1 interface layer as the first step. This interface layer is generated by an interface reaction between CaF2 and the silicon surface [28][29], where surface temperatures around 600 °C during deposition facilitate the dissociation of CaF2 to CaF1 and F. The

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• lithography (EBL) and wet etching consists of 1 μm deep square-based pyramidal pits in the silicon surface. A rhodamine solution (10−4 mol·L−1) is then detected using the Klarite substrate. Candeloro et al. [24] employed EBL and reactive ion etching to machine nanoholes of 400 nm diameter and 50 nm depth

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

• Mathias Franz,
• Romy Junghans,
• Paul Schmitt,
• Adriana Szeghalmi and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2020, 11, 1439–1449, doi:10.3762/bjnano.11.128

• electron vacancies play an important role within the anodic reactions at the silicon surface. The combined reaction can be written as: This reaction summarises two etching mechanisms related to n, the number of consumed holes h+ per etched Si atom. The first mechanism is correlated to n = 4. The silicon

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• Gaussian function. For Au on Si the distribution is given by a Lifshitz–Slyosov–Wagner (LSW) expression. SEM image of gold on silicon after the system reached room temperature. The inset shows a TEM image, in which small gold clusters nucleated on the silicon surface between the droplets can be seen. SEM

Evolution of Ag nanostructures created from thin films: UV–vis absorption and its theoretical predictions

• Robert Kozioł,
• Marcin Łapiński,
• Paweł Syty,
• Damian Koszelow,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2020, 11, 494–507, doi:10.3762/bjnano.11.40

• ), they consist of Ag. Detailed EDS analysis of a cross section of a nanoisland is presented in Figure 8c. As can be seen, a thin layer of natural SiO2, about 2 nm thick, is present on the silicon surface. Interestingly, there is no oxide layer around the Ag nanostructures. The quality of the

Label-free highly sensitive probe detection with novel hierarchical SERS substrates fabricated by nanoindentation and chemical reaction methods

• Jingran Zhang,
• Tianqi Jia,
• Yongda Yan,
• Li Wang,
• Peng Miao,
• Yimin Han,
• Xinming Zhang,
• Guangfeng Shi,
• Yanquan Geng,
• Zhankun Weng,
• Daniel Laipple and
• Zuobin Wang

Beilstein J. Nanotechnol. 2019, 10, 2483–2496, doi:10.3762/bjnano.10.239

• etching. For instance, Chen et al. [8] employed an electrochemical etching method to fabricate nanocube structures on a Cu30Mn70 surface by controlling the voltage. In addition, Zhang et al. [10] showed that gold nanoparticles can be fabricated by a gold etchant on a silicon surface as SERS substrates

• on the roughened silicon surface by the thermal evaporation method. The higher Raman intensity of the sample at 10−8 mol/L was detected on the Au@Ag particle substrate. A three-dimensional nanostar structure was fabricated by Gopalakrishnan et al. [17] in a circular groove. The electric field

Nanoscale spatial mapping of mechanical properties through dynamic atomic force microscopy

• Zahra Abooalizadeh,
• Leszek Josef Sudak and
• Philip Egberts

Beilstein J. Nanotechnol. 2019, 10, 1332–1347, doi:10.3762/bjnano.10.132

• standard silicon chip. The obtained amplitude response on a silicon surface, ASilicon can be used to calculate the drive force exerted on the tip as: where Fdr is the drive force, kn is the normal stiffness of the cantilever obtained from geometric methods [26], and ASilicon is the cantilever oscillation

• amplitude determined on a silicon surface. In the next step we brought the cantilever in contact with the HOPG surface without changing the cantilever excitation frequency and amplitude to maintain the same drive force. The drive force was maintained constant during the scanning of the HOPG surface. Knowing

• stiffness was accomplished with the following equation: where Fdr is the drive force obtained on the silicon surface, AHOPG is the amplitude response of the cantilever measured along the HOPG surface, and keff is the effective stiffness. In the next step, the contact stiffness, required for the

Influence of dielectric layer thickness and roughness on topographic effects in magnetic force microscopy

• Alexander Krivcov,
• Jasmin Ehrler,
• Marc Fuhrmann,
• Tanja Junkers and
• Hildegard Möbius

Beilstein J. Nanotechnol. 2019, 10, 1056–1064, doi:10.3762/bjnano.10.106

• observed directly above the nanoparticles indicating a remaining weak capacitive coupling. Figure 10 shows a cross section of the topography image as well as of the phase image for a single SPION on a silicon substrate. For the single SPION lying directly on the silicon surface a strong repulsion indicated

• to interaction of tip and substrate. Phase shift due to capacitive coupling as a function of the lift height for nanoparticles with 10 nm diameter on a silicon substrate with dielectric layer. The thickness of dielectric layer is 0 nm (silicon surface), 10 nm, 20 nm, 25 nm and 50 nm; calculated for a

Commercial polycarbonate track-etched membranes as substrates for low-cost optical sensors

• Paula Martínez-Pérez and
• Jaime García-Rupérez

Beilstein J. Nanotechnol. 2019, 10, 677–683, doi:10.3762/bjnano.10.67

• infrared (NIR) region, optimized the material by placing a polished silicon surface under the PCTE membrane, and performed sensing experiments with different concentrations of ethanol. In this way, we have demonstrated for the first time to our knowledge that PCTE membranes are suitable for sensing RI

• absorbed by water and will not arrive to the PCTE membrane. This will cause the reflectivity signal to have an even lower intensity. To maximize and improve the reflectivity signal, we placed the PCTE membranes on a polished silicon surface, which has a reflectivity signal of 0.24 a.u. and a flat spectrum

• developed by Aran and co-workers [13], the PCTE membrane can be covalently attached to the silicon surface employing (3-aminopropyl)triethoxysilane (APTES) as a crosslinking reagent, which would avoid folding or displacement of the membrane during the sensing experiments. When measuring the optical response

Au–Si plasmonic platforms: synthesis, structure and FDTD simulations

• Anna Gapska,
• Marcin Łapiński,
• Paweł Syty,
• Wojciech Sadowski,
• Józef E. Sienkiewicz and
• Barbara Kościelska

Beilstein J. Nanotechnol. 2018, 9, 2599–2608, doi:10.3762/bjnano.9.241

• observed at about 545 nm. This sample was subsequently chosen for theoretical calculations. FDTD simulation In order to perform the fully three-dimensional FDTD (finite-differences time-domain) simulations, we reproduced the morphological structure of the gold nanoislands on the silicon surface. A sample

Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates

• Noel Kennedy,
• Ray Duffy,
• Luke Eaton,
• Dan O’Connell,
• Scott Monaghan,
• Shane Garvey,
• James Connolly,
• Chris Hatem,
• Justin D. Holmes and
• Brenda Long

Beilstein J. Nanotechnol. 2018, 9, 2106–2113, doi:10.3762/bjnano.9.199

• allyl-containing dopant molecule by a hydrogen-terminated silicon surface (produced using hydrofluoric acid). A capping layer is then applied to the sample followed by thermal treatment to promote diffusion of the dopant atoms into the silicon substrate while also providing enough energy to activate

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• carriers (Figure 2). An 18 nm amorphous TiO2 layer was conformally deposited on the silicon nanostructures by using atomic layer deposition (ALD). This layer assists with charge separation, stabilizes the silicon surface and helps to passivate trap states, leading to well-known improvements in photo

Self-assembled quasi-hexagonal arrays of gold nanoparticles with small gaps for surface-enhanced Raman spectroscopy

• Emre Gürdal,
• Simon Dickreuter,
• Fatima Noureddine,
• Pascal Bieschke,
• Dieter P. Kern and
• Monika Fleischer

Beilstein J. Nanotechnol. 2018, 9, 1977–1985, doi:10.3762/bjnano.9.188

• ED confirming that the micelles cover the entire silicon surface are shown in Figure 2a,b. The distribution is mostly regular, except for occasional defects, and shows a roughly hexagonal order. The center-to-center-spacing of the ordered particles amounts to 109 ± 20 nm. After deep UV illumination

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• silicon surface. Experimental details Two 11 nm thick SOI wafers were used for this experiment (BOX thickness: 25 nm, as confirmed by ellipsometry). The wafers were implanted with 3 keV As+ ions to a dose of 1 × 1014 cm−2. The implantations were performed through a thin thermal oxide layer (ca. 1 nm thick

Preparation of micro/nanopatterned gelatins crosslinked with genipin for biocompatible dental implants

• Reika Makita,
• Tsukasa Akasaka,
• Seiichi Tamagawa,
• Yasuhiro Yoshida,
• Saori Miyata,
• Hirofumi Miyaji and
• Tsutomu Sugaya

Beilstein J. Nanotechnol. 2018, 9, 1735–1754, doi:10.3762/bjnano.9.165

• apatite-coated silicon surface coated with pillars having a diameter of 4 µm was equivalent to that seen on planar apatite-coated silicon [73]. A decrease in C2C12 cell proliferation on 2 µm pillars patterned on PDMS, PLLA, and a copolymer of PEOT/PBT was seen relative to the respective planar surfaces

Heterostuctures of 4-(chloromethyl)phenyltrichlorosilane and 5,10,15,20-tetra(4-pyridyl)-21H,23H-porphine prepared on Si(111) using particle lithography: Nanoscale characterization of the main steps of nanopatterning

• Phillip C. Chambers and
• Jayne C. Garno

Beilstein J. Nanotechnol. 2018, 9, 1211–1219, doi:10.3762/bjnano.9.112

• distinct differences in the interfacial chemistry of the uncovered silicon surface within the nanoholes versus the surrounding OTS matrix. A closer look at the hexagonal arrangement of nanoholes is presented in Figure 2c and 2d. A few bright spots on the areas of OTS reveal trace contaminants that were not

• was chosen to passivate the silicon surface and to serve as a resist layer to accomplish spatial selectivity for surface reactions. The uncovered sites of Si(111) within the nanoholes expose hydroxyl groups for binding organosilanes such as CMPS. Preparation of CMPS nanodots The samples with nanoholes

• silica microspheres to the silicon surface so that the beads would not be displaced in solution. The substrates containing the silica microspheres masks were then removed from the oven and placed in a 0.1% (v/v) solution of OTS in toluene for 5 h. The samples were then rinsed with ethanol and water with

Scanning speed phenomenon in contact-resonance atomic force microscopy

• Christopher C. Glover,
• Jason P. Killgore and
• Ryan C. Tung

Beilstein J. Nanotechnol. 2018, 9, 945–952, doi:10.3762/bjnano.9.87

• hydrophilic and hydrophobic surfaces matches results reported by Bhushan and co-workers [38]. The scan speed phenomenon was not observed on HOPG at 36% or 70% RH. Goertz et al. [37] found that the viscous interfacial water film did not exist when the hydrophilicity of their oxide-terminated silicon surface

Atomic layer deposition and properties of ZrO₂/Fe₂O₃ thin films

• Kristjan Kalam,
• Helina Seemen,
• Peeter Ritslaid,
• Mihkel Rähn,
• Aile Tamm,
• Kaupo Kukli,
• Aarne Kasikov,
• Joosep Link,
• Raivo Stern,
• Salvador Dueñas,
• Helena Castán and
• Héctor García

Beilstein J. Nanotechnol. 2018, 9, 119–128, doi:10.3762/bjnano.9.14

• process are its application at the industrial scale, preliminary steps illustrating the potential ability to grow electrically or magnetically interesting films conformally on three-dimensional substrates should be considered. For that purpose, the films were deposited on a 3D stacked silicon surface with